| PART |
Description |
Maker |
| MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFFM3482E RFFM3482ESR RFFM3482ETR13X RFFM3482ESQ |
2.4GHz TO 2.5GHz SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
| MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| FMPA215107 FMPA2151 |
2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler
1.5GHz 10 Prescaler
1.5GHz ± 10 Prescaler
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| NJG1553F-C4 NJG1553F-C7 NJG1553F-L6 NJG1553F-C3 NJ |
1.5GHz/1.9GHz Mixer GaAs MMIC(1.5GHz/1.9GHz砷化镓单片微波集成电路混频器(用于数字移动电话和PHS手机
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NJG1552F-L5 NJG1552F-L3 NJG1552F-L7 NJG1552F-C8 NJ |
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| HUF75337S3S HUF75337P3 HUF75337G3 FN4369 |
75A/ 55V/ 0.014 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.014 Ω, N沟道UltraFET功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
